? 2013 ixys corporation, all rights reserved IXYH40N120C3 v ces = 1200v i c110 = 40a v ce(sat) 4.0v t fi(typ) = 38ns ds100416a(02/13) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab high-speed igbt for 20-50 khz switching symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 3.6 4.0 v t j = 150 c 5.2 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1200 v v cgr t j = 25c to 175c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 70 a i c110 t c = 110c 40 a i cm t c = 25c, 1ms 115 a i a t c = 25c 20 a e as t c = 25c 400 mj ssoa v ge = 15v, t vj = 150c, r g = 10 i cm = 80 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 577 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g 1200v xpt tm igbt genx3 tm features z optimized for low switching losses z square rbsoa z positive thermal coefficient of vce(sat) z avalanche rated z high current handling capability z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120C3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ? p to-247 (ixyh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 12 20 s c ie s 1880 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 115 pf c res 40 pf q g(on) 85 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 14 nc q gc 38 nc t d(on) 24 ns t ri 60 ns e on 3.90 mj t d(off) 125 ns t fi 38 ns e of f 0.66 1.15 mj t d(on) 27 ns t ri 72 ns e on 8.20 mj t d(off) 140 ns t fi 38 ns e off 0.70 mj r thjc 0.26 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 note 2 inductive load, t j = 125c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 note 2 prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXYH40N120C3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0123456 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 7v 9v 6v 8v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 12v 9v 13v 10v 7v 11v 6v 8v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 80 0123456789 v ce - volts i c - amperes 7v 6v 5v 8v v ge = 15v 13v 11v 10v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 40a i c = 20a i c = 80a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 9 10 11 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 80 a t j = 25oc 40 a 20 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 v ge - volts i c - amperes t j = - 40oc 25oc 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120C3 fig. 7. transconductance 0 4 8 12 16 20 24 28 0 102030405060708090 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 200 300 400 500 600 700 800 900 1000 1100 1200 1300 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 600v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYH40N120C3 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 0 10 20 30 40 50 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 10 30 50 70 90 110 10 15 20 25 30 35 40 45 50 55 r g - ohms t f i - nanoseconds 0 100 200 300 400 500 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 5 10 15 20 25 30 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 t j - degrees centigrade e off - millijoules 0 5 10 15 20 25 30 35 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 20 30 40 50 60 70 80 i c - amperes t f i - nanoseconds 60 80 100 120 140 160 180 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 25oc, 125oc fig. 17. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 t j - degrees centigrade t f i - nanoseconds 100 110 120 130 140 150 160 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 40a, 80a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120C3 ixys ref: ixy_40n120c3(4a) 11-14-11 fig. 19. inductive turn-on switching times vs. collector current 0 40 80 120 160 200 240 280 320 20 30 40 50 60 70 80 i c - amperes t r i - nanoseconds 20 22 24 26 28 30 32 34 36 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 25oc t j = 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 50 100 150 200 250 300 350 400 450 25 50 75 100 125 t j - degrees centigrade t r i - nanoseconds 20 22 24 26 28 30 32 34 36 38 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 10 15 20 25 30 35 40 45 50 55 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 120 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a
|
